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| AP622 UMTS-band 4W HBT Amplifier Module Product Features * 2.11 - 2.17 GHz * 28 dB Gain * -55 dBc ACLR @ +23 dBm Pavg * +35 dBm P1dB * +28 V Supply * Power Down Mode * RoHS-compliant flange-mount pkg Product Description The AP622 power amplifier module is a two-stage power amplifier module that operates over the frequency range of 2110 - 2170 MHz and is housed in a small, RoHScompliant, flange-mount package. The multi-stage amplifier module has a 28 dB gain, P1dB of 35dBm, and ACLR of -55dBc at +23 dBm output power for WCDMA applications. The AP622 uses a +28V high reliability InGaP/GaAs HBT process technology and does not require any external matching components. The amplifier module operates off a +28V supply; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. All devices are 100% RF and DC tested. The AP622 is targeted for use as a driver stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations. Functional Diagram 1 2 3 4 5 6 Top View Pin No. 1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground Applications * WCDMA Power Amplifiers * Repeaters Specifications W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA Parameter Operational Bandwidth Output Channel Power Power Gain ACLR Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd Vcc Units MHz dBm dB dBc mA % dBm mA V V Min Typ 2110 - 2170 +23 28 -55 135 5 +35 120 +5 +28 Max Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature Rating -40 to +85 C -55 to +150 C Ordering Information Part No. AP622 Description PCS-band 4W HBT Amplifier Module Specifications and information are subject to change without notice Operation of this device above any of these parameters may cause permanent damage. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 4 March 2007 AP622 UMTS-band 4W HBT Amplifier Module Evaluation Board Bias Procedure The following bias procedure is recommended to ensure proper functionality of AP622 in a laboratory environment. The sequencing is not required in the final system application. 5V 28V GND 28V Turn-on Sequence: 1. 2. 3. 4. Attach input and output loads onto the evaluation board. Turn on power supply Vcc = +28V. Turn on power supply Vpd = +5V. Turn on RF power. Turn-off Sequence: 1. 2. 3. Notes: 1. Turn off RF power. Turn off power supply Vpd = +5V. Turn off power supply Vcc = +28V. Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 4 March 2007 AP622 UMTS-band 4W HBT Amplifier Module Performance Graphs W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA +28V GND +28V 10F DNP +5V 0 10F 0 DNP 100pF .01F DNP .01F DNP 100pF RF IN 0 DNP DNP 6 5 4 3 2 1 DNP 0 RF OUT DNP Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. Details of the mounting holes used in the WJ heatsink are given on the last page of this datasheet. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing should be followed: a. Connect RF In and Out b. Connect the voltages and ground pins as shown in the circuit. c. Apply the RF signal d. Power down with the reverse sequence Gain vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 120 mA, 25 C ACLR1 vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 120 mA, 25 C 30 29 -40 2110 MHz 2140 MHz 2170 MHz 28 27 2110 MHz ACLR1 (dBc) 24 25 26 27 -45 Gain (dB) -50 26 25 22 -55 2140 MHz 2170 MHz -60 22 23 24 25 26 27 23 Output Power (dBm) Efficiency vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 120 mA, 25 C Average Output Power (dBm) Icc vs. Output Power WCDMA, Vcc = 28V, Icq = 120 mA, 25 C 15 Collector Efficiency (%) 2110 MHz 170 160 12 9 6 3 0 22 2140 MHz Icc (mA) 2170 MHz 150 140 130 120 23 24 25 26 27 22 23 24 25 26 27 Average Output Power (dBm) Output Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 4 March 2007 AP622 UMTS-band 4W HBT Amplifier Module Outline Drawing AP622 1 2 3 4 5 6 Outline Drawing for the Heatsink with the WJ Evaluation Board Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 4 March 2007 |
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